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Applications of Microscopy in Materials and Life Sciences: Proceedings of 12th Asia-Pacific Microscopy Conference

為了解決How to determine sub的問題，作者 這樣論述：

Dr. Partha Ghosal is a senior Scientist G in DMRL, Hyderabad and is heading the Electron Microscopy Group. He received his Ph.D. from Indian Institute of Technology (IIT-BHU), Varanasi in the field of Metallurgical Engineering in 1996 and worked on the effect of crystal defects in the diffraction th

eory for ordered HCP alloys. He spent one year as DAAD visiting scientist in TU Clausthal, Germany to work on EBSD techniques. Currently, he is working in the area of advanced characterization techniques, along with SEM, EBSD, FIB, TEM, HRTEM and Raman-AFM systems. His current interests include in-s

itu mechanical testing and heating experiments of nano and advanced materials inside electron microscopes and advanced Raman analysis for these materials. Extensive electron microscopic works on Ti-based alloys, W-based alloys and nano-composites are also in the scope of his interest. He is involved

in establishing an advanced materials characterization centre for the country at DRDO. He has around 146 international papers, over 100 invited presentations and 3 patents to his credit. He is a fellow of EMSI with 25 years of research experience. He is member of Electron Crystallography (IUCr) fro

m India. He is reviewer of 11 reputed international journals and life member of professional national bodies such as IIM, MRSI, EMSI and MSI.Dr. C. Barry Carter is a Research Professor and Emeritus Professor at the University of Connecticut, USA. He holds a B.A., M.A. and Sc.D. from Cambridge Univer

sity, an M.Sc. from Imperial College, London, and a D.Phil. from Oxford University. After 6 years in Oxford, he moved to Cornell where he spent 14 years leaving as a full Professor. He spent 16 years as Professor and the 3M Endowed Multidisciplinary Chair in the Department of Chemical Engineering an

d Materials Science at the University of Minnesota and 5 years as Head of UConn’s Department of Chemical, Materials and Biomolecular Engineering. He is a CINT Distinguished Affiliate Scientist at Sandia National Lab. He had earlier held visiting positions at LANL, Chalmers, NIMS in Tsukuba, Bristol

University, Max Planck Institute in Stuttgart, the Institute for Physical Chemistry in Hanover and the Ernst Ruska Center in Jülich. He has been awarded a Guggenheim Fellowship and the Alexander von Humboldt Senior Award. He is the Editor-in-Chief of the Journal of Materials Science, a journal cited

more than 55,099 times in 2019 and 2 million downloads in 2020. His research interests focus on the application of different microscopies to understand how the structure and chemistry of materials determine their properties and behavior. He works on several projects including a study of the deforma

tion of Ta and its growth in thin-film form, electrospinning of TiO2, lithiation of nanomaterials, especially Sn whiskers and MoS2, for battery applications, and how the crystallization dynamics control the properties of phase-change materials. Dr. Rajdeep Sarkar is a scientist at the Defence Metall

urgical Research Laboratory (DMRL), Hyderabad, India. He received his Bachelor of Engineering (Metallurgy) degree from the National Institute of Technology (NIT), Durgapur in 2003. He completed his M.Tech. and Ph.D. degree in Metallurgical and Materials Engineering from Indian Institute of Technolog

y (IIT), Kharagpur in 2005 and 2015, respectively. His area of specialization includes structural and sub-structural characterization (using TEM and related techniques) of materials, like titanium alloys, super alloys, tungsten alloys and nano-materials, along with structure-property correlation. He

is life member of the Indian Institute of Metals (IIM), Electron Microscope Society of India (EMSI) and Materials Research Society of India (MRSI). He has currently a credential of 64 publications in peer-reviewed international journals. Dr. K. R. Vinothkumar is a Structural Biologist and Biochemis

t based at National Centre for Biological Sciences, Bengaluru, India. He pursued his Ph.D. in Membrane protein structural biology from Max-Planck Institute of Biophysics, Frankfurt. Dr. Vinothkumar subsequently joined the Laboratory of Molecular Biology, Cambridge, where he was associated with Dr. R

ichard Henderson, a pioneer in the field of electron cryomicroscopy. In 2017, he joined National Centre for Biological Sciences, Bengaluru, where his lab research interests spans from macromolecular complexes in signalling to enzymes involved in bioremediation. In addition, Dr. Vinothkumar also dire

cts the National CryoEM facility housed in the Institute of Stem Cell Science and Regenerative Medicine, which along with NCBS is part of the Bangalore Life Science campus.

Ethics in Epidemics, Emergencies and Disasters: Research, Surveillance and Patient Care: Training Manual

為了解決How to determine sub的問題，作者World Health Organization (COR) 這樣論述：

In the face of recent pandemic threats (severe acute respiratory syndrome SARS], avian influenza A H5N1, pandemic influenza A H1N1, and the 2014 Ebola virus disease outbreak) and disasters in general, debatehas arisen about the ethical basis of research, surveillance and patient care in such situat

ions. Scholarship onthe ethics of public health crises draws on various areas including clinical practice and research. It is important to keep in mind that emergencies and disasters are the result of interactions between hazardsand community elements--including people's health--with differing vulne

rability and capacity to cope withsituations. The vulnerability, capacity, and overall resilience of countries and their systems, communities, and sub-populations define how well they will manage risks and determine the scale of an emergency.Emergencies and disasters can be due to natural (including

epidemics, hydro, meteorological and geological)and human-induced (including technological hazards conflicts food insecurity and social unrest) causes. The requirements of the community for patient care and for research and surveillance vary case by case and are influenced by how risks are managed

before during and after events and by the type and magnitude of the consequences of emergencies when they occur. The training manual has two parts: Part 1 covers ethical issues in research and surveillance--such as conflicts that might arise between the common good and individual autonomy, ethics ov

ersight, and publication ethics. Part 2 covers patient care--including triage, standards of care, and the professional duties of healthcare workers in emergencies. The teaching resources are modular, comprising seven core competences and 26 learning objectives eachwith a dedicated module. The module

s are based on various types of instruction and activities (e.g. casestudy, lecture, group discussion, role play, video) to meet the learning objective. Slide sets were prepared forthe lectures under each learning objective and summary slide sets for each core competence. At the end ofthe manual you

will find a compilation of all of the case studies used throughout the manual.

GaSe奈米材料成長及其光電特性研究

為了解決How to determine sub的問題，作者王劉霞 這樣論述：

Two topics are being the main results for the highlight in this research and those topics were divided into three parts, GaSe nanobelts (NBs) photodetector, metal-oxide-semiconductor field-effect transistor (MOSFET) properties, Ni-doped GaSe heterostructure, and GaSe nanoflakes (NBs) photodetector-

MOSFET properties. In the first work, only Ga and Se elements were involved through a simple chemical vapor deposition (CVD) without any additional chemical compounds to prevent undesired reactions that lead to the contamination of the as-grown GaSe NBs. Two devices of Ni were provided in this thesi

s as evidence of the plasmonic effect involved at 532 nm. The second device was further treated by the rapid thermal annealing (RTA) for diffusing Ni into GaSe causing the formation Ni-doped GaSe heterostructure to prove the plasmonic not occurred after the RTA treatment. As the evidence for proving

plasmonic occurred in Ni metal only, Ti was used as the electrode in GaSe NB as the further fabricated device and for comparing their performance to obtain the optoelectronic properties. The photodetection performance of the individual GaSe NB with Ni confirmed with the plasmonic effect involved al

so the comparison with Ti electrode was measured under illumination at 405 nm, 450 nm, 532 nm, and 650 nm for discovering the visible wavelength region. The figure of merits semiconductor parameters reveals the at 450 nm 3.59x104 A/W, the external quantum efficiency (EQE) about ~106 %, detectivity a

bout ~1012 Jones, and the rise/decay time within 10%-90% calculation about 40 ms/70 ms for Ni contact. Ti contact shows responsivity at 450 nm 1.70x103 A/W, EQE 105 %, detectivity ~1011 Jones, and rise/decay time within 10%-90% calculation about 20 ms/20 ms. The GaSe-NB with Ni and Ti contact were

measured with a field-effect transistor as the p-type semiconducting with mobility in dark-condition at Vd = 1 V was about 8.56 x 10-4 cm2 V-1 s-1, and 1.06 x 10-4 cm2 V-1 s-1. Additionally, the device after annealing treatment exhibits improvement photodetection performance compared to before the a

nnealing treatment. The responsivity at the same wavelength and power intensity before annealing at 450 nm were about 278.13 A/W and after annealing was about 103 A/W. Other optoelectronic properties such as EQE before annealing were about ~104 % to ~106, detectivity ~1010 Jones to 1011 Jones, and t

he rise/fall time before annealing 20 ms/200 ms to 20 ms/20 ms with the calculation 10%-90%. In the case of nanoflakes (NFs) by introducing the SnI2 and the usage of Si substrate were growth as GaSe NFs on the Si substrate. The individual NF has further fabricated metal-semiconductor junction with N

i and Ti contact and measured under illumination at 405 nm, 450 nm, 532 nm, and 650 nm as well as the FETs. At 450 nm the device Ni provides high responsivity as high as 5.78x104 A/W, EQE ~107 %, detectivity ~1012 Jones, and rise/decay time 10%-90% was about 20 ms/40 ms. Meanwhile, Ti 43.28 A/W, EQE

~104 % with detectivity ~1010 Jones and rise/decay time 10%-90% was about 39 ms/39 ms. The field-effect transistor of GaSe NF with Ni or Ti contact shows the p-type semiconducting with mobility in dark-condition at Vd = 1 V was about 4.66x10-3 cm2 V-1 s-1, and 1.79x10-3 cm2 V-1 s-1. Those metal-sem

iconductor junctions in GaSe NB and GaSe NF with the Ni and Ti contact were further measured with the temperature-dependent I-V curves to obtain the energy barrier. The comparison between Schottky Mott’s theory and Richardson based on experiment have been discovered as the confirmation toward the co

nstruction of their energy-band diagram to determine the typical type of contact with Ni or Ti contact. It reveals the applicability and benefits by obtaining the characterization such as energy barrier also offer possibilities to increase their new unexplored properties. The Schottky barrier height

becomes the crucial unexplored fundamental for revealing the operation and behavior of metal-semiconductor interfaces. The GaSe NB-Ni device Schottky barrier based on the experiment was about 0.21±0.02 eV which is close to the theoretical barrier of 0.14 eV. Meanwhile, the barrier height of GaSe NB

-Ti also provides 0.46±0.06 eV (experiment) and 0.49 eV (theoretical). In the case of GaSe NF-Ni provides the barrier height of about 0.59±0.05 eV (experiment) and 0.53 eV (theoretical). In the case of GaSe NF-Ti provides 0.78±0.03 eV (experiment) and 0.88 eV (theoretical). Finally, sufficient thick

ness between GaSe NBs was obtained within 25 min as the evidence to obtain such as the proved high-performance devices as well as in the GaSe NFs. In addition, its comparison about photodetection performance has with other previous reported works and revealing the construction of the energy band dia

gram leads to generalizing a critical role, functional electronic and optoelectronic based on the fundamental state. Thus, it can define the applicability prospect toward photodetector device application and enhance the performance based on 2D-material semiconductors in the future.