今年我吃超過100家餐廳小吃論文書籍站
長庚大學 電子工程學系 麥凱所指導 Sreekanth Ginnaram的 接口工程在a-COx/MoS2基於的憶阻器，用於神經形態/葡萄糖感測應用 （2019），提出TSL 126關鍵因素是什麼，來自於No。
而第二篇論文國立虎尾科技大學 自動化工程系碩士班 陳俊仁所指導 張軒維的 應用線掃描相機於陶瓷基板表面瑕疵高低解析度檢測系統開發 （2019），提出因為有 線掃描相機、表面瑕疵檢測、自動光學檢測的重點而找出了 TSL 126的解答。
TSL 126進入發燒排行的影片
#林二汶 #EmanLam #最後的信仰
「這首歌是屬於大家的！」
所以 MV 也是屬於大家的，來看看製作花絮！
《最後的信仰》?? https://youtu.be/tsL-kPHb0UU
接口工程在a-COx/MoS2基於的憶阻器，用於神經形態/葡萄糖感測應用
為了解決TSL 126 的問題，作者Sreekanth Ginnaram 這樣論述：
Memristor is one of the promising memories, which can address the scaling and technological issues faced by traditional Si-based nonvolatile memory devices. Owing to their exceptional abilities, such as excellent scalability, fast switching speed, long program/erase (P/E) endurance and low power co
nsumption, several research groups have studied the memristors. Some switching materials like metal oxides, chalcogenides, carbon, and polymers have been reported. However, further research is necessary to control the metal ion (Cuz+) migration for achieving the long program/erase (P/E) endurance an
d artificial synapse characteristics under low energy consumption. In this context, we have designed novel memristive devices using interfacial layer (IL) engineering in a-COx or MoS2-based switching materials. Another novel approach is to detect glucose through human saliva, which is also performed
using memristor. The switching mechanism of Cu oxidation-reduction is explored through glucose detection.The Al/Cu/IL/a-COx/TiNxOy/TiN structure with different thicknesses of AlOx ILs has been fabricated. The Cu migration is controlled by using optimized AlOx IL for the first time. The 4 nm-thick A
lOx layer in Al/Cu/AlOx/a-COx/TiNxOy/TiN structure shows tight distribution of SET/RESET voltage, a long P/E endurance of >109 cycles at an operation current of 300 µA, and artificial synaptic characteristics under the small pulse width of 100 ns. After P/E endurance of >108 cycles, the Cu migration
is observed by ex-situ high-resolution transmission electron microscope (HRTEM) and energy dispersive X-ray spectroscopy (EDS) mapping images.The MoS2 as a switching material has recently shown promising resistive switching characteristics. We have demonstrated the impact of TiOx/Al2O3 IL on resist
ive switching and artificial synapse characteristics using MoS2-based Al/Cu/TiOx(or)Al2O3/MoS2/TiN structure. The TiOx based device shows excellent controlling of RESET voltage and enhanced uniform artificial synapse with a maximum long-term potentiation/depression (LTP/LTD) states of 54/500 with a
low energy consumption of 5.7 pJ. To reduce energy, we have further fabricated the Al/Cu/TiOx/MoS2/Pt cross-points with long P/E endurance at low current operation of 4000 DC cycles and long P/E endurance of >2 × 109 cycles at low operation current of 100 µA. The Hf IL device also shows symmetric an
d gradual RESET, linear conductance, and many LTP/LTD states of 40/100 at 100 ns speed.In addition, the optimized Cu/AlOx/a-COx/TiNxOy/TiN CBRAM detects glucose repeatedly with the low concentration of 1 pM in-vitro as well as real-time measurement of human saliva with the small sample volume of 1 µ
L is also performed. This is due to oxidation-reduction of Cu electrode as well as the switching mechanism is explored.
應用線掃描相機於陶瓷基板表面瑕疵高低解析度檢測系統開發
為了解決TSL 126 的問題，作者張軒維 這樣論述：
摘要................................................iAbstract...........................................ii誌謝................................................iv目錄................................................v表目錄..............................................viii圖目錄....................................
..........x第一章 緒論........................................11.1 前言........................................11.2 研究目的....................................31.3 國內外相關文獻...............................31.4 論文架構....................................24第二章 系統介紹....................................252.1 系統架構
....................................252.2 表面瑕疵檢測機台架構.........................262.3 設備元件介紹................................282.3.1 運動控制軸卡與端子板.........................282.3.2 AC伺服馬達..................................302.3.3 伺服驅動器..................................312.3.4 光學尺與讀頭.....................
...........322.4 視覺相關元件與架構...........................342.4.1 影像擷取卡..................................352.4.2 線掃描相機..................................362.4.3 微距鏡頭....................................382.4.4 集中性線光源................................40第三章 表面瑕疵檢測方式與建置........................423.1 系統校正.
....................................423.2 視覺檢測架構與演算............................513.2.1 圖像二值化...................................513.2.2 均值濾波.....................................553.2.3 影像形態學...................................553.2.4 圖像相減.....................................593.3 線掃描相機相關參數設定....
.....................603.4 單位像素轉換與瑕疵分類.........................62第四章 實驗結果與討論................................644.1 人機介面 (Human-Machine Interface, HMI).......644.1.1 移動平臺控制介面...............................654.1.2 視覺顯示頁面...................................694.2 相機最佳掃描速度校正..........................
..714.3 表面瑕疵檢測系統量測結果........................734.3.1 物件掃描拍攝...................................754.3.2 表面瑕疵檢測...................................764.3.3 表面瑕疵比較量測................................1024.3.4 表面瑕疵檢測彙整................................1084.4 結果討論.......................................1124.
5 不確定因素分析..................................117第五章 結論與未來展望..................................1185.1 結論...........................................1185.2 未來展望.......................................119參考文獻...............................................120附錄一...........................................
......125附錄二.................................................126附錄三.................................................127附錄四.................................................128附錄五.................................................129附錄六.................................................134附錄七.............
....................................139附錄八.................................................144附錄九.................................................149附錄十.................................................154附錄十一...............................................159附錄十二......................................
.........164Extended Abstract.....................................169