PG SOFT的問題，透過圖書和論文來找解法和答案更準確安心。 我們找到下列訂位、菜單、價格優惠和問答集

Industrial Internet of Things: Technologies and Research Directions

為了解決PG SOFT的問題，作者 這樣論述：

Anand Sharma, received his Ph.D. degree in Engineering from MUST, Lakshmangarh, MTech from ABV-IIITM, Gwalior and BE from RGPV, Bhopal. He has been working with Mody University of Science and Technology, Lakshmangarh for last 10 years. He has more than 14 years of experience of teaching and research

. He has been invited to several reputed institutions ISI-Kolkata, IIT-Mumbai, IIT-Jodhpur, IIT-Delhi, RTU-Kota etc. He has pioneered research in areas of Information Security, IoT, WBAN and Machine Learning. He is a member of IEEE, IET, ACM, IE(India), Life Member of CSI and ISTE. He is serving as

secretary of CSI-Lakshmangarh Chapter and Student Branch Coordinator of CSI-MUST Student branch. He has more than 6 authored/edited books with national and international publishers. He has contributed more than 10 book chapters in books of reputed publishers. He has organized more than 15 conference

s / seminars and workshops. He has chaired more than 8 special sessions and delivered 6 Keynote addresses in international conferences. He is serving on advisory capacity in several international journals as Editorial Member and in International Conferences as Technical Programme committee / Organiz

ing committee.Sunil Kumar Jangir received his B.E. (Information Technology) with honors from the University of Rajasthan in July 2009. He received the M.Tech. degree with highest distinction in Software Engineering from Suresh Gyan Vihar University, Jaipur and the Ph.D. degree in Computer Science &

Engineering from Jecrc University, Jaipur. He is having 12+ years of teaching experience in the field of Computer science & Engineering. He has published more than 35 research papers in national and international conferences and journals. He has contributed more than 05 book chapters in books of rep

uted publishers. He is a member of IET, ACM and IEEE Dr. Jangir serves as a convener of 1st and 2nd ICITDA, 1st- NCITSA, Convener of JECRC Hackathon 1.0 and nominated 4 time as Institute SPOC for Smart India Hackathon. Dr. Jangir chaired no. of sessions in various international Conferences. He is cu

rrently an Associate Professor with the Department of Computer Science & Engineering, Anand International College of Engineering, Jaipur. Dr. Jangir Currently serving IEEE Student Branch Counselor. Dr. Jangir Currently served IEEE Student Branch Faculty coordinator of MUST. He was Asscoiated with CS

I-Inida in past. The main area of his research interest includes Computer Networks, Machine learning, Deep learning as well as routing protocols for ad- hoc networks. Currently, he is working in the area of IoT.Manish Kumar received the B.Tech. degree in Applied Electronics and Instrumentation Engin

eering from Biju Patnaik University, Rourkela, India, in 2010 and the M.Tech. Degree in Biomedical Engineering from the Manipal Univesity, Udupi, India, in 2013. He received Ph.D. degree in Electrical and Electronics Engineering, Birla Institute of Technology, Mesra, Ranchi, India, 2019. Worked as a

research associate in the Indian Institute of Technology, Patna, India. He is currently an Assistant Professor with the Department of Biomedical Engineering, Mody University of Science and Technology, Sikar, Rajasthan, India. His areas of interest are Medical Image Processing, Signal Processing, Ma

chine Learning and Nature Inspired Techniques. Dilip Kumar Choubey, is currently working as an Assistant Professor in the Department of Computer Science & Engineering, Indian Institute of Information Technology Bhagalpur, India since 9th November 2020. He worked as an Assistant Professor (Senior) in

the School of Computer Science and Engineering, Vellore Institute of Technology, Vellore, India during 13th May 2019 to 06th November 2020, Worked as an Assistant Professor (On Contract) in NIT Patna, India during 30th March 2017 to 09 May 2019. He has worked as an Asst. Prof. in Lakshmi Narain Col

lege of Technology (L.N.C.T), Bhopal, India and Oriental College of Technology (O.C.T), Bhopal, India. He has more than 9 years of teaching and research experiences. He received his Ph.D. in Engineering from Birla Institute of Technology (B.I.T), Mesra, Ranchi, India in 2018. He received his M.Tech

degree in Computer Science and Engineering and B.E. degree in Information Technology from RGPV Bhopal, India in 2012 and 2010 respectively. He is an author of 2 books, 1 copyrights grant and has more than 45 reputed research publications in international journals, book chapters and conference procee

dings. He has also one project as a Co-PI funded by TEQUIP Collaborative Research Scheme. He is guiding 02 Ph.D. students, has guided many PG and UG projects. He has conducted several FDP/Workshop. He has delivered many expert talks as well as attended in FDP/Workshop/Conferences. He has been also t

he member of the organizing and technical program committees of many conferences and Workshop. He has reviewed many research papers in reputed journal/conferences/book chapters. He is the lifetime members of several professional bodies. His research interests include Artificial Intelligence, Machine

Learning, Deep Learning, Data Science, Soft Computing, Pattern Recognition, Bioinformatics, Data Mining, Database Management System, and IoT, etc.Tarun Shrivastava is Founder and CEO of Tishitu Electronics deals with Industrial, Govt and commercial product development and Tishitu Technology and res

earch private Ltd. deals with educational expertise where in team of 80 Professional connected in India and Abroad . Tishitu is registered with MSME iStart Rajasthan, Certified with ISO accreditation system with Scotland UK, & well renowned name in the domain of Engineering. He has developed Hydroge

n Fuel Cell for green energy fuel generation HHO Home gas 2010-2016. He also worked with company Omega Electronics Jaipur for various Educational products like Digital computer interface simulators for digital electronics VLSI kit for learning VHDL and Verilog programs to embedded in environment wit

h Xilinx for CPLD and FPGA interface.S.Balamurugan received his B.Tech., M.Tech., and PhD Degrees all in the field of Information Technology from Anna University, India. He received three Post-Doctoral Degrees-a Doctor of Letters(D.Litt., ), Doctor of Science (D.Sc., ) and Doctor of Technology(D.Tec

h., ). He has published 50 books, 200+ international journals/conferences and 60 patents to his credit. He is the Director-Research and Development, Intelligent Research Consultancy Services(iRCS), Coimbatore, Tamilnadu, India. He is serving as a research consultant to many Companies, Startups, SMEs

and MSMEs. He is the Editor-in-Chief of the Book Series Artificial Intelligence and Soft Computing for Industrial Transformation, Scrivener, John Wiley. Artificial Intelligence an Learning Techniques for Engineering, Bentham Sciences, Advances in Quantum Computing, Artificial Intelligence and Data

Sciences for Industrial Transformation, and Advances in IoT, Robotics and Cyber Physical Systems for Industrial Transformation, CRC Press, Taylor & Francis Group. He is the Editor-in-Chief of Information Science Letters, Natural Sciences Publishing, NSP and International Journal of Robotics and Arti

ficial Intelligence, PRIRS, USA. He is Associate Editor of IEICE Transactions on Information and Systems-Oxford University Press, Cluster Computing- Springer, Simulation- Sage Publishing, Technology and Healthcare- IOS Press, Intelligent IoT Computing, Inderscience, World Journal of Engineering, Eme

rald, International Journal of Intelligent Systems, Technologies and Application, Inderscience, International Journal of Renewable Energy Technology, Inderscience Publishers, Journal of Autonomous Intelligence, Frontier Scientific Publishing. He is also in editorial of International Journal of Intel

ligent Unmanned Systems, Emerald, International Journal of Automation and Control, Inderscience Publishers, International Journal of Society, Systems and Science, Inderscience Publishers, International Journal of System Dynamics Applications (IJSDA), IGI Global Publishers, International Journal of S

ervice Science, Management, Engineering, and Technology, IGI Global Publishers, International Journal of Knowledge and System Sciences, IGI Global Publishers and several other journals of Taylor & Francis, Inderscience, Emerald, IET, MDPI, De Gruyter and Lead Guest Editor of several special issues w

ith Springer, Elsevier and IEEE. He is the recipient of Rashtriya Vidhya Gourav Gold Medal Award and The Best Educationalist Award from Hon.Justice O.P Saxena, Supreme Court, New Delhi and the Former Chairman of Minority Council, New Delhi, India. He is the recipient of two Lifetime Achievement Awar

ds. He is the recipient of Dr.A.P.J.Abdul Kalam Sadhbhavana Award form Hon.Balmiki Prasad Singh, Former Governor of Sikkim, Jewel of India Award from Mr. Gurpreet Singh, General Secretary, India, Star of Asia Award from Mr. Korn Debbaransi, Former Dy. Prime Minister, Thailand, in an International Su

mmit at (Bangkok) Thailand & Pride of Asia Research Excellence Award from Hon.Anant. V.Sheth, Deputy Speaker- Goa Legislative Assembly, Best Director Award. He received the Active Member CSI National Award. He was awarded the Prestigious Mahatma Gandhi Leadership Award at House of Commons, British P

arliament, London, UK. The book he authored on Machine Learning and Deep Learning Algorithms using MATLAB and PYTHON won Best MATLAB Book for Beginners Award by Book Authority. Dr. S. Balamurugan won the CSI Young IT Professional Award. He is the winner of the National CSI Youth Award 2020, by Compu

ter Society of India. He is also the recipient of the Best Researcher Award, Certificate of Exceptionalism, Young Scientist Award, Best Young Researcher Award and Outstanding Scientist Award. His biography is listed in Marquis WHO’S WHO, New Jersey, USA. His professional activities include roles as

Editor-in-Chief/Associate Editor/ Editorial Board Member for more than 500+ International Journals/Conferences of high repute and impact. He has been invited as Chief Guest/Resource Person/Keynote Plenary Speaker in many reputed Universities and Colleges at National and International Levels. His res

earch interests include Artificial Intelligence, Augmented Reality, Internet of Things, Big Data Analytics, Cloud Computing, and Wearable Computing. He is a life member of ACM, IEEE, ISTE and CSI.

PG SOFT進入發燒排行的影片

運用奈米鉑-金雙金屬顆粒增強近紅外光吸收於癌症光熱治療法

為了解決PG SOFT的問題，作者吳鈞裕 這樣論述：

摘要 iiAbstract iii圖目錄 vii表目錄 ix誌謝 x第一章 前言 11.1研究背景與目的 11.2實驗流程圖 2第二章 文獻回顧與理論 32.1奈米材料 32.1.1奈米鉑 32.1.2奈米金 32.2光熱治療 42.3卵巢癌 42.3.1卵巢癌診斷 52.3.2卵巢癌的治療 62.4乳腺癌 62.4.1乳腺癌的診斷 72.4.2乳腺癌的治療 8第三章 實驗材料與分析方法 103.1實驗材料與藥品 103.2實驗儀器 113.3材料製備 1

23.4材料分析 123.4.1穿透式電子顯微鏡及能量色散-X-射散光譜(Energy Dispersive Spectroscopy)分析 123.4.2材料粒徑大小統計 123.5感應耦合電漿光學發射光譜儀分析(ICP-OES Assay) 133.6細胞實驗 133.6.1培養基製備 133.6.2細胞解凍 153.6.3細胞培養 153.6.4細胞計數 153.6.5細胞保存 163.7細胞存活率分析(MTT Assay) 163.7.1 含有分散劑之Pt/Au NPs及Au NPs毒性分析 173.7.2未含有分

散劑之Pt/Au NPs及Au NPs毒性分析 173.8光熱治療 183.8.1 Pt/Au NPs及Au NPs光熱治療 183.8.2 Pt/Au NPs及Au NPs對細胞之光熱治療 183.9動物實驗 193.9.1腫瘤動物模式誘發與建立 193.9.2光熱治療動物 203.9.3動物犧牲組織與採樣 203.9.4動物組織切片與病理分析 203.10實驗統計分析 20第四章 結果與討倫 214.1 TEM表面形貌觀察與粒徑分析 214.1.1 Pt/Au NPs及Au NPs離心前後之形貌 214.1.2

Pt/Au NPs及Au NPs不同濃度之形貌 214.2感應耦合電漿光學發射光譜儀分析(ICP-OES Assay) 224.3細胞存活率分析(MTT Assay) 224.3.1 Pt/Au NPs及Au NPs含有分散劑對SKOV-3之MTT試驗及T-test分析 234.3.2 Pt/Au NPs及Au NPs含有分散劑對JC之MTT試驗及T-test分析 234.3.3 Pt/Au NPs及Au NPs未含有分散劑對SKOV-3之MTT試驗及T-test分析 244.3.4 Pt/Au NPs及Au NPs未含有分散劑對JC之MTT試驗及T-tes

t分析 254.4光熱治療 264.4.1 Pt/Au NPs及Au NPs升溫取線 264.4.2 Pt/Au NPs及Au NPs對SKOV-3光熱治療試驗及T-test分析 274.4.3 Pt/Au NPs及Au NPs對JC光熱治療試驗及T-test分析 284.5動物實驗 294.5.1動物體重觀察 294.5.2動物光熱治療升溫取線 294.5.3動物腫瘤體積估算 304.5.4動物組織病理切片 31第五章 結論 33參考文獻 34附件 88

Healthcare and Knowledge Management for Society 5.0: Trends, Issues, and Innovations

為了解決PG SOFT的問題，作者 這樣論述：

Vineet Kansal is a professor at Institute of Engineering Technology, a constituent college of Dr APJ Abdul Kalam Technical University, Lucknow, India. He has done B.Tech. (Computer Science & Engineering) from G B Pant University Agriculture & Technology, Pantnagar, and, M.Tech. and Ph.D. from Indian

Institute of Technology (IIT) Delhi. Currently, he is Pro Vice Chancellor of Dr. A. P. J. Abdul Kalam Technical University. Dr Kansal has been in academics for more than 28 years. He has taught different computer science courses to B.Tech., MCA and M.Tech. students. Dr Kansal has supervised Masters

and Doctoral students’ research work.He has published several research papers in reputed journals, conferences, book chapters apart from being Book editor. His area of research interest includes Data Analytics, Machine Learning, Artificial Intelligence, Networking, Cloud Computing, Big Data Analyti

cs and Optimization. Raju Ranjan, PhD is currently the Professor in School of Computing Science & Engineering at Galgotias University, India. He received his Ph.D. in the area of Data Mining from Uttarakhand Technical University, India. He also earned his M. Tech. in Computer Science from JRN Univer

sity, India. He also holds Master of Physics from Magadh University, India. Professor Ranjan has over twenty years of experience as an academician. Earlier he was associated with Department of Computer Science & Engineering at Greater Noida Institute of Technology, Greater Noida, India. He also serv

ed Ideal Institute of Technology, Ghaziabad as HOD of Computer Science & Engineering department. He also worked in Graphic Era Institute of Technology (Now Graphic Era University, Dehradun), and Priyadarshini College of Computer Sciences. His research interests include Data Mining, IoT and Cyber Sec

urity. He holds an Australian patent for secure communication among IoT devices and an Indian patent for automatic prevention of fluid clogging. He has published over 25 research papers in international journals & conferences and some book chapters. He has delivered keynote speeches at various confe

rences. He also reviewed several articles for prominent international journals. He has guided several under-graduate and post-graduate students in various research projects of Databases, Computer Graphics, Networking and Cyber Security. He is also guiding PhD students from Galgotias UniversitySapna

Sinha is an Associate Professor in Amity Institute of Information Technology, Amity University Uttar Pradesh, Noida. She has 20+ years of teaching experience in teaching UG and PG computer science courses. She is Ph.D. in Computer Science and Engineering from Amity University. She has authored sever

al book chapters and research papers in journal of repute. Machine Learning, Big Data Analytics, Artificial Intelligence, Networking and Security is her area of Interest. She is D-Link certified Switching and Wireless professional, she is also Microsoft Technology Associate in Database management sy

stem, Software Engineering and Networking. She is EMC Academic Associate in Cloud Infrastructure Services. https: //orcid.org/0000-0002-2504-8030 Rajdev Tiwari is a committed academician with around 20 years of experience at premier engineering colleges of Uttar Pradesh like KNIT Sultanpur, IPEC Gha

ziabad, ABESIT Ghaziabad, NIET Greater Noida etc. Currently he is working with GNIOT Greater Noida as Professor and Head Computer Science and Engineering department. He is basically M.Sc in Electronics, MCA and have done PhD in Computer Science. He has also done PGDASDD from CDAC Noida and qualified

UGC NET in year 2012. He has been visiting faculty at AMITY University, Noida and at IETE, New Delhi for PhD and ALCCS programs respectively for past many years. He is actively associated with various professional bodies like IEEE, CSI, ISTE etc. He has published more than 30 research papers in var

ious journal of international repute. He has attended and chaired various international conferences. He has delivered keynote speeches at various TEQIP-III FDPs and judged many project exhibitions as technical judge. He has guided around 10 M.Tech dissertations and one PhD. He is guiding 5 PhD schol

ars from Dr APJAKTU, at present. He has authored two books; one on soft computing published by Acme Learning, and another on Algorithms published by Pearson. He is on the panel of various International Journals as Editor/Reviewer. He has received various grants for Research Project, Conferences & FD

Ps from reputed organizations like DrAPJ AKTU, Lucknow & AICTE, New Delhi.Nilmini Wickramasinghe, MBA PhD, is currently the Professor of Digital Health and the Deputy Director of the Iverson Health Innovation Research Institute at Swinburne University of Technology and inaugural Professor - Director

Health Informatics Management at Epworth HealthCare. She also holds honorary research professor positions at the Peter MacCallum Cancer Centre and Northern Health. After completing 5 degrees at the University of Melbourne, she was awarded a full scholarship to complete PhD studies at Case Western R

eserve University, Cleveland, OH, USA and later she was sponsored to complete executive education at Harvard Business School, Harvard University, Cambridge, MA, USA in Value-based HealthCare. For over 20 years, Professor Wickramasinghe has been actively, researching and teaching within the health in

formatics/digital health domain in US, Germany and Australia with a particular focus on designing, developing and deploying suitable models, strategies and techniques grounded in various management principles to facilitate the implementation and adoption of technology solutions to effect superior, v

alue-based patient centric care delivery. Professor Wickramasinghe collaborates with leading scholars at various premier healthcare organizations and universities throughout Australasia, US and Europe and is well published with more than 400 referred scholarly articles, more than 15 books, numerous

book chapters, an encyclopaedia and a well established funded research track record securing over ＄25M in funding from grants in US, Australia, Germany and China as a chief investigator. She holds a patent around analytics solution for managing healthcare data and is the editor-in-chief of two schol

arly journals published by InderScience: Intl. J. Biomedical engineering and Technology(www.inderscience.com/ijbet) and Intl. J Networking and virtual Organisations(www.inderscience.com/ijnvo) as well as the editor of the Springer book series Healthcare Delivery in the Information Age. She received

the prestigious 2020 Alexander von Humboldt award for outstanding contribution to a scientific discipline (Digital Health).

基於石墨烯及生物碳基材料的可撓式電晶體應用與能量攫取

為了解決PG SOFT的問題，作者Mamina Sahoo 這樣論述：

Table of ContentsAbstract.......................................................................................................iFigure Captions........................................................................................xiTable Captions...................................................

....................................xxiChapter 1: Introduction1.1 Flexible electronics................................................................................11.2 Graphene the magical material ………………………….……….......21.2.1 Synthesis of graphene…………………………….….…...21.2.1.1 Mechanical exfoliati

on of graphene………………...……21.2.1.2 Epitaxial growth on Sic substrate………………….…..31.2.1.3 Chemical vapor deposition (CVD) method………….…..41.2.2 Graphene transfer…………………………………………....41.3 Application of graphene based Electronics……………………….......51.3.1 Graphene based flexible transparent electrode

……………….61.3.2 Top gated Graphene field effect transistor…………………….71.4 Challenges of flexible graphene based field effect transistors.……….91.5 Energy harvesting devices for flexible electronics………….........….91.6 Solar cell…………………………………………………………...101.6.1 Device architecture…………………………………………101.

6.2 Issues and Challenges of Perovskite solar cells………...121.7 Triboelectric nanogenerator (TENG)………………………………121.7.1 Working mode of TENG………………………………….141.8 Applications of TENG………………………………………………151.8.1 Applications of graphene based TENG…………………....151.8.2 Applications of bio-waste material ba

sed TENG………….171.9 Key challenges of triboelectric nanogenerator…………………....…191.10 Objective and scope of this study………………………………....19Chapter 2: Flexible graphene field effect transistor with fluorinated graphene as gate dielectric2.1 Introduction………………………………………………………....212.2 Material preparation a

nd Device fabrication………………. 232.2.1CVD Growth of Graphene on Copper Foil………………….232.2.2 Transfer of graphene over PET substrate……………...........252.2.3 Fabrication of fluorinated graphene ……………...........252.2.4 F-GFETs with FG as gate dielectric device fabrication……262.2.5 Material and electrical C

haracterization …………………272.3 Results and discussion…………………………………………….282.3.1 Material characterization of PG and FG……………...…...….282.3.2 Electrical characterization of F-GFET with FG as dielectrics..332.3.3 Mechanical stability test of F-GFET with FG as dielectrics ….362.4 Summary…………………………………………………

………....40Chapter 3: Robust sandwiched fluorinated graphene for highly reliable flexible electronics3.1 Introduction………………………………………………………….423.2 Material preparation and Device fabrication ………………….........443.2.1 CVD Growth of Graphene on Copper Foil…………………...443.2.2 Graphene fluorination …...…….…………

…………..............443.2.3 F-GFETs with sandwiched FG device fabrication....................443.2.4 Material and electrical Characterization…..............................453.3 Results and discussion ……………………………………...............453.3.1 Material characterization of sandwiched…………………….453.3.2 Electric

al characterization of F-GFET with sandwiched FG....473.3.3 Mechanical stability test of F-GFET with sandwiched FG…503.3.4 Strain transfer mechanism of sandwiched FG………………513.4 Summary…………………………………………………………....53Chapter 4: Functionalized fluorinated graphene as a novel hole transporting layer for ef

ficient inverted perovskite solar cells4.1 Introduction………………………………………………………….544.2 Material preparation and Device fabrication......................................564.2.1 Materials ………………………...…………………………564.2.2 CVD-Graphene growth ……………………………...…...564.2.3 Graphene fluorination …………………………………….564.

2.4 Transfer of fluorinated graphene…………………………...574.2.5 Device fabrication …………………………………….….574.2.6 Material and electrical Characterization …….....................584.3 Results and discussion …………………………………………….594.3.1 Surface electronic and optical properties of FGr……….….594.3.2 Characterization o

f FGr and perovskite surface ……….…644.3.3 Electrical performance of PSC………………….…….…...694.3.4 Electrical performance of Flexible PSC……………………724.4 Summary…………………………………………………………...78Chapter 5: Flexible layered-graphene charge modulation for highly stable triboelectric nanogenerator5.1 Introduction…………

…………………………………………....795.2 Experimental Section……………………………………………….825.2.1 Large-area graphene growth ……………………………….825.2.2 Fabrication of Al2O3 as the CTL …………………………...825.2.3 Fabrication of a Gr-TENG with Al2O3 as the CTL………825.2.4 Material characterization and electrical measurements…….835.3 Results

and discussion.…………………………………...…………845.3.1 Material Characterization of Graphene Layers/Al2O3……845.3.2 Working Mechanism of Gr-TENG with Al2O3 as CTL…915.3.3 Electrical Characterization of Gr-TENG with Al2O3 CTL…945.3.4 Applications of the Gr-TENG with Al2O3 as CTL……….1015.4 Summary…………………………………………

……………….103Chapter 6: Eco-friendly Spent coffee ground bio-TENG for high performance flexible energy harvester6.1 Introduction…………………………………………………….......1046.2 Experimental Section…………………………………………….1086.2.1 Material Preparation …………………………………….1086.2.2 Fabrication of SCG powder based TENG………………...1086

.2.3 Fabrication of SCG thin-film based TENG ………………1096.2.4 Material characterization and electrical measurements….1106.3 Results and discussion.…………………………………...………1116.3.1 Material Characterization of SCG powder and thin film….1116.3.2 Working Mechanism of SCG-TENG……………………...1186.3.3 Electrical Cha

racterization of SCG-TENG……………….1226.3.4 Applications of the SCG thin-film based TENG………….1326.4 Summary………………………………………………………….134Chapter 7: Conclusions and future perspectives7.1 Conclusion………………………………………………………....1357.2 Future work …………………………….………………………….1377.2.1 Overview of flexible fluorinated g

raphene TENG..............1377.2.1.1 Initial results………………………………….…1387.2.2.1.1 Fabrication of FG-TENG………………1387.2.2.1.2 Working principle of FG-TENG……….1397.2.2.1.3 Electrical output of FG-TENG.………...140References…………………………………………………………….142Appendix A: List of publications………………….……………..........177A

ppendix B: Fabrication process of GFETs with fluorinated graphene (FG) as gate dielectric……........……………………………………….179Appendix C: Fabrication process of GFETs with sandwiched FG…....180Appendix D: Fabrication process of inverted perovskite solar cell with FGr as HTL…………………………………………………………….181Appendi

x E: Fabrication of a Gr-TENG with Al2O3 as the CTL…….182Appendix F: Fabrication of SCG based triboelectric nanogenerator….183Figure captionsFigure 1-1 Exfoliated graphene on SiO2/Si wafer……………………….3Figure 1-2 Epitaxial graphene growth on SiC substrate………………....3Figure 1-3 Growth mechanism of graphe

ne on Cu foil by CVD ……......4Figure 1-4 Wet transfer process of CVD grown graphene…………...….5Figure 1-5 RGO/PET based electrodes as a flexible touch screen.……....6Figure 1-6 Graphene based (a) touch panel (b) touch-screen phone…….7Figure 1-7 Flexible graphene transistors (a) (Top) Optical photograph

of an array of flexible, self-aligned GFETs on PET. (Bottom) The corresponding schematic shows a device layout. (b) Schematic cross-sectional and top views of top-gated graphene flake–based gigahertz transistors. (Left) AFM image of a graphene flake. (Right) Photograph of flexible graphene devices

fabricated on a PI substrate. (c) Cross-sectional schematic of flexible GFETs fabricated using a self-aligned process……8Figure 1-8 The magnitude of power needed for meet certain operation depending critically on the scale and applications………………………10Figure 1-9 Schematic diagrams of PSC in the (a) n-i

-p mesoscopic, (b) n-i-p planar, (c) p-i-n planar, and (d) p-i-n mesoscopic structures………...12Figure 1-10 Schematic illustration of the first TENG...………………...13Figure 1-11 Working modes of the TENG. (a) The vertical contact-separation mode. (b) The lateral sliding mode. (c) The single-electrode mode

. (d) The free-standing mode ………………………………...……14Figure 1-12 Schematic illustration of (a) device fabrication of graphene-based TENGs (b) graphene/EVA/PET-based triboelectric nanogenerators (c) device fabrication of stretchable CG based TENG with electrical output performance……………………………………………………...17

Figure 1-13 Schematic illustration and output performance of bio-waste material based TENG (a) Rice-husk (b) Tea leaves (c) Sun flower powder (SFP) (d) Wheat stalk based TENG………….…………………………18Figure 2-1 Graphene synthesis by LPCVD method……….…………...24Figure 2-2 Schematic diagram of (a) preparation pro

cess of 1L-FG/copper foil (b) Layer by layer assembly method was used for fabricating three-layer graphene over copper foil and then CF4 plasma treatment from top side to form 3L-FG/copper foil…………………….26Figure 2-3 Schematic illustration of fabrication process of F-GFET with FG as gate dielectric ……

……………………………………………….27Figure 2-4 (a) Raman spectra of PG, 1L-FG and 3L-FG after 30 min of CF4 plasma treatment over copper foil. (b) Peak intensities ratio ID/IG and optical transmittance of PG, 1L-FG and 3L-FG. Inset: image of PG and 1L-FG film over PET substrate. (c) Typical Raman spectra of PG, 1L

-FG and 3L-FG on PET substrate. (d) Optical transmittance of PG, 1L-FG and 3L-FG film over PET substrate. The inset shows the optical image of GFETs with FG as gate dielectrics on PET ……….…………30Figure 2-5 XPS analysis result of (a) PG (b) 1L-FG (c) 3L-FG where the C1s core level and several carbon f

luorine components are labeled. The inset shows the fluorine peak (F 1s) at 688.5 eV……………………….32Figure 2-6 (a) Water contact angle of PG, 1L-FG and 3L-FG over PET substrate. (b) The relationship between water contact angle of PG, 1L-FG and 3L-FG and surface-roughness………………………………………33Figure 2-7 (a) I

d vs. Vd of w/o-FG, w/1L-FG and w/3L-FG samples after 30 min of CF4 plasma (b) Id vs. Vg of w/o-FG, w/1L-FG and w/3L-FG samples at a fixed value of drain to source voltage, Vds of 0.5 V (c) Gate capacitance of w/o-FG, w/1L-FG and w/3L-FG samples (d) Gate leakage current of w/o-FG (naturally formed A

l2OX as gate dielectric), w/1L-FG and w/3L-FG samples ……………………………...…………...……...34Figure 2-8 (a) Schematic illustration of bending measurement setup at different bending radius. (i) Device measurement at (i) flat condition (ii) bending radius of 10 mm (iii) 8 mm (iv) 6 mm. Inset shows the photograph

of measurement setup. Change in (b) carrier mobility (c) ION of w/o-FG, w/1L-FG and w/3L-FG samples as a function of bending radius. The symbol ∞ represents the flat condition. Change in (d) carrier mobility (e) ION of w/o-FG, w/1L-FG and w/3L-FG samples as a function of bending cycles (Strain = 1.

56%)…………………………………….38Figure 3-1 Schematic illustration of the flexible top gate graphene field effect transistor with sandwich fluorinated graphene (FG as gate dielectric and substrate passivation layer) ……………………………...…………44Figure 3-2 Raman spectra of (a) PG/PET and PG/FG/PET substrate (b) sandwiche

d FG (FG/PG/FG/PET). Inset showing the optical transmittance of sandwiched FG. (c) HRTEM image for 1L-FG.……………….….…46Figure 3-3 (a) Id vs. Vd of FG/PG/FG device at variable vg (−2 to 2 V). (b) Id vs. Vg of FG/PG/FG. (c) Gate capacitance of FG/PG/FG ….…….48Figure 3-4 Raman spectra of devices under be

nding (a) PG/PET (Inset shows the 2D peak) (b) PG/FG/PET (inset shows the 2D peak) …….…49Figure 3-5 (a) Change in Mobility (b) change in ION of PG/PET and PG/FG/PET as a function of bending radius between bending radii of ∞ to 1.6 mm in tensile mode (c) Change in Mobility (d) Change in ION of PG/PET

and PG/FG/PET as a function of bending cycles. Inset of (c) shows the photograph of F-GFETs with sandwich FG on the PET substrate (e) change in resistance of w/1L-FG, 1L-FG/PG/1L-FG samples as a function of bending radius ………………………...……………….50Figure 3-6 Schematic evolution of proposed strain transf

er mechanism through PG/PET and PG/FG/PET. The inset of PG/PET sample shows the generation of sliding charge due to interfacial sliding between PG and PET ………………………………………………………………….….52Figure 4-1 FGr fabrication and transfer process …………….………....57Figure 4-2 (a) Raman analysis of pristine graphene a

nd the FGr samples after 5, 10, 20, and 30 min of CF4 plasma treatment over Cu foil (b) Raman intensity ratios (I2D/IG and ID/IG) of fluorinated graphene, with respect to the exposure time ……………………………………………60Figure 4-3 SEM images of (a) ITO, (b) ITO/1L-FGr, (c) ITO/2L-FGr, and (d) ITO/3L-FGr …………………

………………………………….61Figure 4-4 XPS analysis of FGr with (a) 5 min (b) 10 min and (c) 20 min of CF4 plasma treatment on the Cu foil (d) The fluorine peak (F1s) of FGr (f) The correlation of the carbon-to-fluorine fraction (C/F) with exposure time and the corresponding carrier concentrations …………….………62Fi

gure 4-5 Tauc plots and UV–Vis absorption spectra of FGr films with CF4 plasma treatment for (a) 5, (b) 10, and (c) 20 min ….………......….63Figure 4-6 WCAs on PEDOT: PSS and 1L, 2L, and 3L FGr samples ...64Figure 4-7 (a) Mechanism of large grain growth of perovskite on a non-wetting surface (b) Top-vi

ew and cross-sectional surface morphologies of perovskites on various HTLs ………………………………...…………65Figure 4-8 XRD of perovskite films on various HTL substrates ….…...66Figure 4-9 UPS spectra of various numbers of FGr layers on ITO: (a) cut-off and (b) valance band spectra …………………………………….….67Figure 4-10

Energy band diagrams of PSCs with (a) PEDOT: PSS, (b) 1L-FGr, (c) 2L-FGr, and (d) 3L-FGr as HTL …………………….…….68Figure 4-11 (a) Steady state PL spectra of PEDOT: PSS/perovskite and FGr/perovskite films. (b) TRPL spectral decay of PEDOT: PSS/perovskite and FGr/perovskite films………………………….……69Figure 4-1

2 (a) Schematic representation of a PSC having an inverted device configuration. (b) Cross-sectional HRTEM image of the ITO/ FGr–perovskite interface………………………………………...………70Figure 4-13 Photovoltaic parameters of PSCs incorporating various HTL substrates: (a) PCE (%), (b) Voc (V), (c) Jsc (mA/cm2), an

d (d) FF (%)....71Figure 4-14 Normalized PCEs of target and control PSCs incorporating various HTL substrates, measured in a N2-filled glove box. (a) Thermal stability at 60 °C (b) Light soaking effect under 1 Sun (c) Stability after several days …………………………………………………………….72Figure 4-15 (a) Schematic r

epresentation of the structure of a flexible PSC on a PET substrate (b) J–V curves of control and target flexible PSCs, measured under both forward and reverse biases. (c) Average PCE of flexible PSCs incorporating PEDOT: PSS and FGr HTLs……….…73Figure 4-16 (a) Normalized averaged PCEs of the flexibl

e PSCs after bending for 10 cycles at various bending radii. (b) Normalized averaged PCEs of the flexible PSCs plotted with respect to the number of bending cycles at a radius of 6 mm ………………………………………………75Figure 4-17 Photovoltaics parameters of flexible PSCs with various HTL substrates: (a) JSC (mA/c

m2), (b) Voc (V), and (c) FF (%) ……………....75Figure 4-18 XRD patterns of perovskite films on PET/ITO/FGr, recorded before and after bending 500 times …………………………………….76Figure 4-19 SEM images of (a) perovskite films/FGr/ITO/PET before bending (b) after bending 500 times (c) perovskite films/PEDOT: PSS/

ITO/PET before bending (d) after bending 500 times ……………….…77Figure 4-20 PL spectra of perovskite films on PET/ITO/FGr, recorded before and after various bending cycles …………………………….…78Figure 5-1 Schematic illustration showing the fabrication process of a flexible Gr-TENG with Al2O3 as the CTL ……………

………………...83Figure 5-2 The Raman spectra of (a) graphene/Al-foil/PET and (b) graphene/Al2O3/Al-foil/PET. The I2D/IG of graphene layers (1L, 3L and 5L) over (c) Al-foil/PET substrate (d) Al2O3/Al-foil/PET substrate …...85Figure 5-3 XRD patterns of (a) graphene/Al-foil/PET and (b) graphene/Al2O3/Al-foi

l/PET ……………………………………………86Figure 5-4 FESEM image of the graphene surface on (a) Al-foil/PET and (b) Al2O3/Al-foil/PET. EDS analysis of (c) graphene/Al-foil/PET and (d) graphene/Al2O3/Al-foil/PET (e) EDS elemental mapping of the graphene/Al2O3/Al-foil/PET presenting C K series, O K series and Al K ser

ies …………………………………………………………….………87Figure 5-5 3D AFM images of (a) 1L-Gr (b) 3L-Gr (c) 5L-Gr on Al foil (d) 1L-Gr (e) 3L-Gr (f) 5L-Gr on Al2O3/Al foil………………….….….89Figure 5-6 Work function of graphene layers on the (a) Al-foil (b) Al2O3/Al-foil substrate by KPFM. Inset showing the surface potential of

graphene layers (1L, 3L and 5L) over Al-foil and Al2O3 substrate (c) energy band diagrams for 1L-Gr, 3L-Gr and 5L-Gr over Al2O3 ……....90Figure 5-7 Schematic illustration of Electronic energy levels of graphene samples and AFM tip without and with electrical contact for three cases: (i) tip and the

1L-Gr (ii) tip and the 3L-Gr and (iii) tip and the 5L-Gr over Al2O3/Al foil/PET……………………………………….…...…………91Figure 5-8 Working mechanism of Gr-TENG with Al2O3 ….….…...…93Figure 5-9 a) ISC and (b) VOC of 1L-, 3L- and 5L-Gr-TENGs without Al2O3 CTL (c) Sheet resistance of graphene as a function of number

of layers ………………………………...…...…………………………….95Figure 5-10 Electrical output of the Gr-TENG with Al2O3 CTL: (a) ISC and (b) VOC of 1L-, 3L- and 5L-Gr. Magnification of the (c) ISC and (d) VOC of the 3L-Gr-TENG with Al2O3 as the CTL. Average mean (e) ISC and (f) VOC generated by pristine Gr-TENGs (1L, 3L

and 5L) and Gr-TENGs (1L, 3L and 5L) with Al2O3 CTL. Error bars indicate standard deviations for 4 sets of data points ……………...…………….….…......96Figure 5-11 (a) CV of Al/Al2O3/3L-Gr/Al at 100 kHz and 1 MHz (b) CV hysteresis of 3L-Gr-TENG with Al2O3 as CTL with different sweeping voltages (c) Surface

charge density of graphene (1L, 3L and 5L)-based TENG with and without Al2O3 as CTL ………………………………...98Figure 5-12 Circuit diagram of output (a) VOC and (b) ISC measurement of 3L-Gr TENG with Al2O3 CTL as a function of different resistors as external loads. Variation in VOC and ISC w.r.t different re

sistors as external loads of (c) 3L-Gr TENG with Al2O3 CTL (d) 3L-Gr TENG without Al2O3 CTL. Relationship between electrical output power and external loading resistance (e) 3L-Gr TENG with Al2O3 CTL (f) 3L-Gr TENG without Al2O3 CTL…………………………………….………………...99Figure 5-13 (a)Electrical stability and du

rability of the 3L-Gr TENG with Al2O3 (b) Schematic illustrations showing the charge-trapping mechanism of 3L-Gr-TENG without and with Al2O3 charge trapping layer ………101Figure 5-14 (a) Photograph showing 20 LEDs being powered (b) Circuit diagram of bridge rectifier (c) Charging curves of capacitors

with various capacitances (d) Photograph of powering a timer …….………………102Figure 6-1 The schematic diagram of the fabrication process for SCG powder based TENG ……………………………………………….….108Figure 6-2 The schematic diagram of the fabrication process for SCG thin-film based TENG via thermal evaporation meth

od ………………109Figure 6-3 FESEM image of (a) SCG powder (inset image illustrates the high magnification of SCG powder) (b) SCG thin-film/Al foil/PET (inset image illustrates the high magnification of SCG thin-film). EDS of the (c) SCG powder (d) SCG thin-film/Al foil/PET…………………………. 112Figure 6-4 Raman

spectra analysis (a) pristine SCG powder (b) SCG thin-film/Al foil/PET. XRD patterns of (c) SCG powder (d) SCG thin film with different thickness ……………………………………… ……….115Figure 6-5 FTIR analysis of the (a) pristine SCG powder sample (b) SCG thin film………………………………………………………………...116Figure 6-6 3D AFM ima

ge of SCG thin-film with various thickness (a) 50 nm (b)100 nm and (c) 200 nm……………………………………...117Figure 6-7 Schematic illustration of working principle of SCG thin-film based TENG …………………………………………………………...119Figure 6-8 Finite element simulation of the generated voltage difference for SCG thin-film b

ased TENG based on the contact and separation between SCG thin film and PTFE …………….……………………….120Figure 6-9 (a) The setup for electrical property testing, which including a Keithley 6514 system electrometer and linear motor. Electrical output (b) ISC (c) VOC of TENGs based on different friction pairs

for checking the triboelectric polarity of SCG…………………………………………...123Figure 6-10 Electrical measurement of (a) ISC and (b) VOC of the SCG thin-film based TENG. Mean value of (d) ISC (e) VOC and (f) Output power density of the pristine SCG powder and thermal deposited SCG thin-film based TENG. ...………

………………………………………125Figure 6-11 (a) Schematic illustration of KPFM for measuring the work function. (b) Surface potential images of SCG thin film with various thickness (50 nm, 100 nm and 200 nm). (c) Surface potential and (d) Work function vs SCG thin film with various thickness (50 nm, 100 nm and 20

0 nm).………….……………………………………………….128Figure 6-12 (a) Isc and (b) Voc of SCG thin film based TENG under different contact frequencies (c) Isc and (d) Voc of SCG thin film based TENG under different separation distance…………………………….129Figure 6-13 Electrical response (a) ISC (b) VOC of pristine SCG powder an

d (c) ISC (d) VOC of SCG thin-film based TENG with respect to different relative humidity (35-85% RH) …………………………….131Figure 6-14 Electrical stability and durability test of the output performance of (a) pristine SCG powder based TENG (b) SCG thin-film based TENG……………………………………………………………132Figure 6-15

Applications of the SCG thin film based TENG as a power supply: (a) Circuit diagram of the bridge-rectifier for charging a capacitor (b) Charging curves of capacitors with various capacitances (0.1, 2.2 and 3.3 µF) (c) Photograph of powering a timer…………………...………133Figure 7-1 Schematic illustration o

f FG based TENG…….….……….139Figure 7-2 Working mechanism of FG based TENG…………………140Figure 7-3 Electrical output of FG-TENG: (a) Isc and (b) Voc …….….141Table captionsTable 2-1 Comparison of flexible G-FETs on/off ratio of our work with other’s work…………………………………………………...………...40Table 3-1 Summary of th

e electrical and mechanical performance of flexible w/o-FG, w/ 1L-FG, w/3L-FG and sandwich FG (FG/PG/FG) samples......................................................................................................52Table 3.2: Comparison of the electrical and mechanical performance of sandwich FG ba

sed F-GFET with previous F-GFET with different gate dielectrics……………………………………………………….………53Table 4-1 Best photovoltaic performance from control and target devices prepared on rigid and flexible substrates……………………………......74Table 5-1 EDS elemental analysis of graphene over Al-foil/PET and Al2O3/Al-foi

l/PET ………………………………………………………88Table 5-2 Comparison of electrical output performance of Gr-TENGs with and without Al2O3 CTL samples used in this study………………103Table 6-1 EDS elemental analysis of SCG-Powder and SCG thin film /Al foil/PET………………………………………………………………...113Table 6-2 Comparison of electrical o

utput performance of SCG-TENGs samples used in this study……………………………………………...126